华体会官方网页版-华体会(中国)

官方微信
友情链接

华体会官方网页版-华体会(中国):Semiconductor Membranes for Electrostatic Exciton Trapping in Optically Addressable Quantum Transport Devices

2023-06-19
 Author(s): Descamps, T (Descamps, Thomas); Liu, F (Liu, Feng); Kindel, S (Kindel, Sebastian); Otten, R (Otten, Rene); Hangleiter, T (Hangleiter, Tobias); Zhao, C (Zhao, Chao); Lepsa, MI (Lepsa, Mihail Ion); Ritzmann, J (Ritzmann, Julian); Ludwig, A (Ludwig, Arne); Wieck, AD (Wieck, Andreas D.); Kardynal, BE (Kardynal, Beata E.); Bluhm, H (Bluhm, Hendrik)
 
Source: PHYSICAL REVIEW APPLIED Volume: 19  Issue: 4  Article Number: 044095  DOI: 10.1103/PhysRevApplied.19.044095  Published: APR 28 2023 
 
Abstract: Combining the capabilities of gate-defined quantum transport devices in GaAs-based heterostructures and of optically addressed self-assembled quantum dots could open up broad perspectives in quantum technologies. For example, interfacing stationary solid-state qubits with photonic quantum states would open up a pathway towards the realization of a quantum network with extended quantum processing capacity in each node. While gated devices allow very flexible confinement of electrons or holes, the confinement of excitons without some element of self-assembly is much harder. To address this limitation, we introduce a technique to realize exciton traps in quantum wells via local electric fields by thinning a heterostructure down to a 220-nm-thick membrane. We show that mobilities over 1 x 106 cm2 V-1 s-1 can be retained and that quantum point contacts and Coulomb oscillations can be observed on this structure, which implies that the thinning does not compromise the heterostructure quality. Furthermore, the local lowering of the exciton energy via the quantum-confined Stark effect is confirmed, thus forming exciton traps. These results lay the technological foundations for devices like single-photon sources, spin-photon interfaces and eventually quantum network nodes in GaAs quantum wells, realized entirely with a top down fabrication process.
 
Accession Number: WOS:000991891200003
 
ISSN: 2331-7019


关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
友情链接
中华人民共和国科学技术部
中国科华体会官方网页版-华体会(中国)
中国工程院
国家自然科学基金委员会
中国科华体会官方网页版-华体会(中国)大学
中国科学技术大学
中国科华体会官方网页版-华体会(中国)科技产业网
版权所有 华体会官方网页版-华体会(中国)

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科华体会官方网页版-华体会(中国)半导体所声明

华体会官方网页版-华体会(中国):

华体会官方网页版-华体会(中国)