华体会官方网页版-华体会(中国):A Low Power BJT-Based CMOS Temperature Sensor Using Dynamic-Distributing-Bias Circuit
Author(s): Zhai, SC (Zhai, Shichong); Li, WC (Li, Wenchang); Zhang, TY (Zhang, Tianyi); Liu, J (Liu, Jian)
Source: IEICE ELECTRONICS EXPRESS?DOI: 10.1587/elex.21.20230500??Early Access Date: JAN 2024??
Abstract: A low power dynamic-distributing-bias CMOS temperature sensor is presented for temperature-sensing RFID tag. To reduce the chip area and power consumption, we propose a new hybrid PTAT/REF current generator. A new current-mode readout scheme is devised, which is dedicated to improve the dynamic range utilization of ADC and further reduce the power consumption. Fabricated in 0.153 mu m CMOS process, the sensor shows a measured inaccuracy of-0.6 degrees C to +0.8 degrees C from -40 degrees C to 125 degrees C. This performance is obtained by using precision and nonlinearity compensation techniques such as VBE trimming, ratio-metric curvature correction, chopping and dynamic element matching (DEM). The sensor has low power consumption of 2.21 mu W under a 1.6 V supply and occupies an area of 0.07 mm(2).
Accession Number: WOS:001165023700001
ISSN: 1349-2543
