华体会官方网页版-华体会(中国):A low power BJT-based CMOS temperature sensor using dynamic-distributing-bias circuit????(Open Access)
Zhai, Shichong; Li, Wenchang; Zhang, Tianyi; Liu, Jian Source: IEICE Electronics Express, v 21, n 4, February 2024;
Abstract:
A low power dynamic-distributing-bias CMOS temperature sensor is presented for temperature-sensing RFID tag. To reduce the chip area and power consumption, we propose a new hybrid PTAT/REF current generator. A new current-mode readout scheme is devised, which is dedicated to improve the dynamic range utilization of ADC and further reduce the power consumption. Fabricated in 0.153 ?m CMOS process, the sensor shows a measured inaccuracy of??0.6C to +0.8C from??40C to 125C. This performance is obtained by using precision and nonlinearity compensation techniques such as VBE trimming, ratio-metric curvature correction, chopping and dynamic element matching (DEM). The sensor has low power consumption of 2.21 ?W under a 1.6 V supply and occupies an area of 0.07 mm
Copyright ? 2024 The Institute of Electronics, Information and Communication Engineers. (31 refs.)
