华体会官方网页版-华体会(中国):Investigation of Hydrogen Flux Influence on InGaP Layer and Device Uniformity
Author(s): Yang, SY (Yang, Shangyu); Guo, N (Guo, Ning); Zhao, SQ (Zhao, Siqi); Li, YK (Li, Yunkai); Wei, MY (Wei, Moyu); Zhang, Y (Zhang, Yang); Liu, XF (Liu, Xingfang)
Source: ELECTRONICS Volume: 13 ?Issue: 11 ?Article Number: 2109?
DOI: 10.3390/electronics13112109 ?Published Date: 2024 JUN ?
Abstract: In this study, we conduct a comprehensive examination of the influence of hydrogen (H2) carrier gas flux on the uniformity of epitaxial layers, specifically focusing on the InGaP single layer and the full structure of the InGaP/GaAs heterojunction bipolar transistor (HBT). The results show that an elevated flux of H(2 )carrier gas markedly facilitates the stabilization of layer uniformity. Optimal uniformity in epitaxial wafers is achievable at a suitable carrier gas flux. Furthermore, this study reveals a significant correlation between the uniformity of the InGaP single layer and the overall uniformity of HBT structures, indicating a consequential interdependence.
