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Author(s): Jiang, J (Jiang, Ji); Shi, MM (Shi, Mingming); Xia, ZC (Xia, Zhengchang); Cheng, Y (Cheng, Yong); Chu, ZM (Chu, Zema); Zhang, W (Zhang, Wei); Li, JZ (Li, Jingzhen); Yin, ZG (Yin, Zhigang); You, JB (You, Jingbi); Zhang, XW (Zhang, Xingwang)

Source: SCIENCE ADVANCES Volume: 10 ?Issue: 18 ?Article Number: eadn5683 ?

DOI: 10.1126/sciadv.adn5683 ?Published Date: 2024 MAY 3 ?

Abstract: Perovskite light-emitting diodes (PeLEDs) have attracted great attention in recent years; however, the halogen vacancy defects in perovskite notably hamper the development of high-efficiency devices. Previously, large-sized passivation agents have been usually used, while the effect of defect passivation is limited due to the weak bonding or the large space steric hindrance. Here, we predict that the ultrasmall-sized formate (Fa) and acetate (Ac) have more efficient passivation ability because of the stronger binding with the perovskite, as demonstrated by density functional theory calculation. We introduce ultrasmall-sized cesium salts (CsFa/CsAc) into buried interface, which can also diffuse into the bulk, resulting in both buried interface and bulk passivation. In addition, the improved perovskite growth has been found due to the enhanced hydrophily after introducing CsFa/CsAc as additive. According to these advantages, a pure-red PeLED with 24.2% efficiency at 639 nm has been achieved.