华体会官方网页版-华体会(中国)

He, Rui; Wang, Yongxiang; Song, Yijian; Ran, Junxue; Yang, Jiankun; Wu, Jin; Hu, Qiang; Wei, Xuecheng; Wang, Junxi; Wei, Tongbo Source: Applied Physics Letters, v 124, n 25, June 17, 2024; ISSN: 00036951; DOI: 10.1063/5.0213979; Article number: 251103; Publisher: American Institute of Physics

Author affiliation:

Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China

College of Bioresources Chemical and Materials Engineering, Shaanxi University of Science and Technology, Shaanxi, Xi'an; 710021, China

Jihua Lab, Foshan; 528200, China

Abstract:

In this work, we report on the selective area growth (SAG) of InGaN multiple quantum well (MQW) structures to completely suppress the phenomenon of the Stokes shift in monolithically integrated photonic chips. The original green MQW region is designed as the integrated photodetector (PD), while the SAG blue MQW region acts as the integrated light-emitting diode (LED). The detection spectra of the PD can completely cover the emission spectra of the LED, greatly improving the on-chip optical connection by the complete suppression of the Stokes shift. Thus, the bottleneck of on-chip optical connection based on spectra-tail overlap in integrated photonic chips has been broken. Under the same operating current, the photocurrent of the SAG integrated PD reaches 11.8 μA, while the conventional chip achieves only 0.6 μA. By SAG method, the photo-to-dark current ratio of integrated PD exhibits about two orders of magnitude increase under 0 V bias. Undoubtedly, the SAG technology provides a strategy to further improve the on-chip optical signal transmission efficiency of the MQW structure integrated photonic chips.